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  1-441 60 v/0.7 ohm, general purpose, 1 form a, solid state relay technical data hssr-8060 ? telecommunication switching equipment ? reed relay replacement ? 28 vdc, 24 vac, 48 vdc load driver ? industrial relay coil driver description the hssr-8060 consists of a high-voltage circuit, optically coupled with a light emitting diode (led). this device is a solid-state replacement for single- pole, normally-open (1 form a) electromechanical relays used for general purpose switching of signals and low-power loads. the relay turns on (contact closes) with a minimum input current, i f , of 5 ma through the input led. the relay turns off (contact opens) with an input voltage, v f , of 0.8 v or less. the detector contains a high speed photosensi- tive fet driver circuit and two high voltage mosfets. this relays logic level input con- trol and very low typical output on-resistance of 0.4 w makes it suitable for both ac and dc loads. connection a, as shown in the schematic, allows the relay to switch either ac or dc loads. connection b, with the polarity and pin configuration as indicated in the schematic, allows the relay to switch dc loads only. the advantage of connection b is that the on-resistance is significantly reduced, and the output current capability increases by a factor of two. the electrical and switching char- acteristics of the hssr-8060 are specified from -40 c to +85 c. features ? compact solid-state bidirectional switch ? normally-off single-pole relay function (1 form a) ? 60 v output withstand voltage in both polarities at 25 c ? 0.75/1.5 amp current ratings (see schematic for connections a & b) ? low input current; cmos compatibility ? very low on-resistance: 0.4 w typical at 25 c ? ac/dc signal and power switching ? input-to-output momentary withstand insulation voltage: 2500 vac, 1 minute ? 16-kv esd immunity: mil- std-883, method 3015 ? ieee surge withstand capability (ieee std 472-1974) ? csa approved ? ul 508 approved applications ? programmable logic controllers caution: it is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by esd. functional diagram truth table (positive logic) led on off output l h h 5965-3575e
1-442 selection guide maximum maximum maximum 6-pin dip 4-pin dip maximum on output output hermetic (300 mil) (300 mil) speed resistance voltage current minimum 8-pin single dual t(on) r(on) vo(off) io(on) input single channel channel msec w v ma current channel package package 25 c25 c25 c25 c ma packages hssr-8400 [1] 0.95 10 400 150 5 hssr-8060 1.4 0.7 60 750 5 HSSR-8200 [1] 1.5 200 200 40 1 6 1 90 800 5 hssr-7110 [1] note: 1. technical data are on separate hp publication. ordering information specify part number followed by option number (if desired). hssr-8060#xxx 300 = gull wing surface mount lead option 500 = tape/reel package option (1 k min.) option data sheets available. contact your hewlett-packard sales representative or authorized distributor for information. schematic i f v f 1 2 + 6 switch driver 5 4
1-443 outline drawing 6-pin dip package (hssr-8060) 9.40 (0.370) 9.90 (0.390) pin one dot hp rxxxx yyww type number date code 2.16 (0.085) 2.54 (0.100) 2.28 (0.090) 2.80 (0.110) 0.51 (0.020) min. 0.45 (0.018) 0.65 (0.025) 4.70 (0.185) max. 2.92 (0.115) min. 6.10 (0.240) 6.60 (0.260) 0.20 (0.008) 0.33 (0.013) 5?typ. 7.36 (0.290) 7.88 (0.310) dimensions in millimeters and (inches). 5 6 3 2 1 1.78 (0.070) max. 4
1-444 240 d t = 115?, 0.3?/sec 0 d t = 100?, 1.5?/sec d t = 145?, 1?/sec time ?minutes temperature ?? 220 200 180 160 140 120 100 80 60 40 20 0 260 123 456789101112 6-pin device outline drawing option #300 (gull wing surface mount) thermal profile (option #300) regulatory information the hssr-8060 has been approved by the following organizations: ul recognized under ul 508, component recognition program, industrial control switches, file e142465. csa approved under can/csa-c22.2 no. 14-95, industrial control equipment, file lr 87683. figure 1. maximum solder reflow thermal profile. (note: use of non-chlorine activated fluxes is recommended.) 4.19 (0.165) 2.29 (0.090) 2.54 (0.100) typ. 0.635 ?0.130 (0.025 ?0.005) 9.65 ?0.25 (0.380 ?0.010) 7.62 ?0.25 (0.300 ?0.010) 0.635 ?0.25 (0.025 ?0.010) 12?nom. 0.20 (0.008) 0.30 (0.013) 1.78 (0.070) max. 9.65 ?0.25 (0.380 ?0.010) 6.35 ?0.25 (0.250 ?0.010) dimensions in mm (inches) tolerances: xx.xx = 0.01 xx.xxx = 0.001 (unless otherwise specified) lead coplanarity maximum: 0.102 (0.004) [3] [5] 1.194 (0.047) 1.778 (0.070) 4.826 (0.190) typ. 9.398 (0.370) 9.906 (0.390) max. pad location (for reference only) 0.381 (0.015) 0.635 (0.025) hp rxxxx yyww type number date code
1-445 insulation and safety related specifications parameter symbol value units conditions min. external air gap l(io1) 7.0 mm measured from input terminals to output (external clearance) terminals, shortest distance through air min. external tracking path l(io2) 8.5 mm measured from input terminals to output (external creepage) terminals, shortest distance path along body min. internal plastic gap 0.5 mm through insulation distance, conductor to (internal clearance) conductor, usually the direct distance between the photoemitter and photodetector inside the optocoupler cavity tracking resistance cti 200 v din iec 112/vde 0303 part 1 (comparative tracking index) isolation group iiia material group (din vde 0110, 1/89, table 1) option 300 C surface mount classification is class a in accordance with cecc 00802. absolute maximum ratings storage temperature ................................................... -55 c to+125 c operating temperature - t a .......................................... -40 c to +85 c case temperature - t c .......................................................... +105 c [1] average input current - i f ............................................................ 20 ma repetitive peak input current - i f ............................................... 40 ma (pulse width 1 ms; duty cycle 50%) transient peak input current - i f ............................................... 100 ma (pulse width 200 m s; duty cycle 1%) reverse input voltage - v r ................................................................ 3 v input power dissipation .............................................................. 40 mw output voltage (t a = 25 c) connection a - v o ......................................................... - 60 to +60 v connection b - v o ............................................................. 0 to +60 v average output current - figure 3 (t a = 25 c, t c 70 c) connection a - i o ..................................................................... 0.75 a connection b - i o ..................................................................... 1.50 a single shot peak output current (100 ms pulse width, t a = 25 c, i f = 10 ma) connection a - i o .................................................................... 3.75 a connection b - i o ...................................................................... 7.0 a output power dissipation ..................................................... 750 mw [2] lead solder temperature .... 260 c for 10 s (1.6 mm below seating plane) infrared and vapor phase reflow temperature (option #300) ......................................... see fig. 1, thermal profile thermal resistance typical output mosfet junction to case C q jc = 55 c/w demonstrated esd performance human body model: mil-std- 883 method 3015.7 - 16 kv machine model: eiaj 1988.3.28 version 2), test method 20, condition c C 1200 v surge withstand capability ieee std 472-1974
1-446 dc electrical specifications for -40 o c t a +85 c unless otherwise specified. all typicals at t a = 25 c. connec- parameter tion sym. min. typ. max. units test conditions fig. notes output a |v o(off) |60 v v f = 0.8 v, i o = 250 m a, 5 withstand t a = 25 c voltage 55 v f = 0.8 v, i o = 250 m a ar (on) 0.4 0.7 w 6,7 3 b 0.1 0.2 a 1.6 i f = 10 ma, i o = 750 ma b 0.4 output a i o(off) 10 -4 1.0 m av f = 0.8 v, v o = 60 v, 13 leakage t a = 25 c current output off- a c (off) 135 pf v f = 0.8 v, v o = 25 v, 14 capacitance f = 1 mhz output off- a |v os |1 m vi f = 5 ma, i o = 0 ma 18 4 set voltage input reverse v r 3vi r = 100 m a breakdown voltage input v f 1.3 1.6 1.85 v i f = 10 ma, t a = 25 c15 forward voltage input diode d v f / d t a -1.3 mv/ o ci f = 10 ma temperature coefficient input c in 72 pf v f = 0 v, f = 1 mhz capacitance recommended operating conditions parameter symbol min. max. units input current (on) i f(on) 520ma input voltage (off) v f(off) 0 0.8 volt operating temperature t a -40 +85 c output voltage connection a v o(off) -55 55 volt connection b 0 55 output current connection a i o(on) -0.75 0.75 a connection b -1.5 1.5 output on- resistance (pulse duration 30 ms) i f = 10 ma, i o = 750 ma (pulse duration 30 ms), t a = 25 o c
1-447 switching specifications for -40 c t a +85 c with connection a, unless otherwise specified. all typicals at t a = 25 c. parameter symbol min. typ. max. units test conditions fig. notes turn on time t on 0.93 1.4 ms i f = 10 ma, v dd = 60 v, 2,8, 7 i o = 750 ma, t a = 25 c 9,10, 1.8 ms i f = 10 ma, v dd = 55 v, i o = 750 ma turn off time t off 0.013 0.1 ms i f = 10 ma, v dd = 60 v, 2,8, i o = 750 ma, t a = 25 c 11,12, 0.1 ms i f = 10 ma, v dd = 55 v, i o = 750 ma output |dv o /dt| 1000 v/ m sv (peak) = 60 v, r m 3 1 m w ,16 transient c m = 1000 pf, t a = 25 c rejection input-output |dv i-o /dt| 2500 v/ m sv dd = 5 v, v i-o(peak) = 1000 v, 17 transient r l = 1 k w , c l = 25 pf, rejection t a = 25 c package characteristics for 0 c t a 70 c, unless otherwise specified. all typicals at t a = 25 c. parameter symbol min. typ. max. units test conditions fig. notes input-output v iso 2500 v rms rh 50%, t = 1 min, t a = 25 c 5,6 momentary with- stand voltage* resistance r i-o 100 g w v i-o = 500 vdc, t = 1 min, 5 input-output rh = 45% capacitance c i-o 1.0 pf v i-o = 0 v, f = 1 mhz 5 input-output *the input-output momentary withstand voltage is a dielectric voltage rating that should not be interpreted as an input-output continuous voltage rating. for the continuous voltage rating refer to the vde 0884 insulation characteristics table (if applicable), your equipment level safety specification, or hp application note 1074, optocoupler input-output endurance voltage. 20,21 notes: 1. the case temperature, t c , is measured at the center of the bottom of the package. 2. for derating, see figure 4. the output power p o derating curve is obtained when the part is handling the maximum average output current i o as shown in figure 3. 3. during the pulsed r on measurement (i o duration 30 ms), ambient (t a ) and case temperature (t c ) are equal. 4. v os is a function of i f , and is defined between pins 4 and 6, with pin 4 as the reference. v os must be measured in a stable ambient (free of temperature gradients). 5. device considered a two terminal device: pins 1, 2, and 3 shorted together and pins 4, 5, and 6 shorted together. 6. this is a momentary withstand proof test. these parts are 100% tested in production at 3000 v rms, one second. 7. for a faster turn-on time, the optional peaking circuit shown in figure 2 may be implemented. 20,21
1-448 figure 5. normalized typical output withstand voltage vs. temperature. figure 7. typical on state output i-v characteristics. figure 2. recommended input circuit. figure 6. normalized typical output resistance vs. temperature. figure 3a. maximum average output current rating vs. ambient temperature. figure 3b. maximum average output current rating vs. case temperature. figure 4. output power derating vs. case temperature.
1-449 figure 8. switching test circuit for t on , t off . figure 9. typical turn on time vs. temperature. figure 10. typical turn on time vs. input current. figure 11. typical turn off time vs. temperature. figure 12. typical turn off time vs. input current.
1-450 connection a v f(off) = 0.8 v v o(off) = 55 v figure 13. typical output leakage vs. temperature. figure 14. typical output capacitance vs. output voltage. figure 16. output transient rejection test circuit. figure 15. typical input forward current vs. input forward voltage.
1-451 figure 17. input-output transient rejection test circuit. figure 18. voltage offset test setup. figure 19. thermal model. t jo = led junction temperature t 11 = fet 1 junction temperature t 12 = fet 2 junction temperature t jd = fet driver junction temperature t c = case temperature ( measured at center of package bottom) t a = ambient temperature (measured 15 cm away from the package) q ca = case-to-ambient thermal resistance all thermal resistance values are in c/w.
1-452 figure 20. turn on time variation with high temperature operating life. figure 21. turn on time variation with temperature cycling.
1-453 related by the expression r ss =p o (max)/(i o (max)) 2 from which r ss can be calculated. staying within the safe area assures that the steady state junction temperatures remain less than 125 c. as an example, for a case temperature of 100 c, figure 4 shows that the output power dissipation should be limited to less than 0.5 watts. a check with figure 3b shows that the output current should be limited to less than 150 ma. this yields an r ss of 22 w . applications information thermal model the steady state thermal model for the hssr-8400 is shown in figure 19. the thermal resistance values given in this model can be used to calculate the tempera- tures at each node for a given operating condition. the thermal resistances between the led and other internal nodes are very large in comparison with the other terms and are omitted for simplicity. the components do, however, interact indirectly through q ca , the case-to-ambient thermal resistance. all heat generated flows through q ca , which raises the case temperature t c accordingly. the value of q ca depends on the conditions of the board design and is, therefore, determined by the designer. the typical value for each output mosfet junction-to-case thermal resistance is specified as 55 c/w. this is the thermal resistance from one mosfet junction to the case when power is dissipated equally in the mosfets. the power dissipation in the fet driver is negligible in comparison to the mosfets. on-resistance and derating curves the output on-resistance, r on , specified in this data sheet, is the resistance measured across the output contact when a pulsed current signal (i o = 150 ma) is applied to the output pins. the use of a pulsed signal ( 30 ms) implies that each junction temper- ature is equal to the ambient and case temperatures. the steady- state resistance, r ss , on the other hand, is the value of the resistance measured across the output contact when a dc current signal is applied to the output pins for a duration sufficient to reach thermal equilibrium. r ss includes the effects of the tem- perature rise of each element in the thermal model. derating curves are shown in figures 3 and 4. figure 3 speci- fies the maximum average output current allowable for a given ambient or case temperature. figure 4 specifies the output power dissipation allowable for a given case temperature. above a case temperature of 93 c, the maximum allowable output current and power dissipation are turn on time variation for applications which are sensitive to turn on time, the designer should refer to figures 20 and 21. these figures show that although there is very little variation in t on within most of the population, a portion of the distribution will vary with use. the optional peaking circuit shown in figure 2 can be used to reduce the total turn on time and, consequently, any associated variation.


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